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| SMD Type Hight Speed Power Switching 2SJ506S TO-252 IC MOSFET Features Low on-resistance RDS(on) = 0.065 Low drive current +0.2 9.70-0.2 +0.1 0.80-0.1 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 typ. (at VGS = -10V, ID = -5A) +0.15 5.55-0.15 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.28 1.50-0.1 +0.25 2.65-0.1 4V gate drive devices. 2.3 +0.15 4.60-0.15 +0.15 0.50-0.15 High speed switching 0.127 max 1 Gate 2 Drain 3 Source +0.1 0.60-0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage (AC) Gate to source voltage (DC) *1 Drain current (DC) Drain current(pulse) *2 Power dissipation TA=25 TC=25 Channel temperature Storage temperature Channel to Case Channel to Ambient *1 f = 20 kHz, Duty Cycle * 2 PW 10 s; d 1%. 10% (+Side) Symbol VDSS VGSS VGSS ID ID PD PD Tch Tstg Rth(ch-C) Rth(ch-A) Rating -60 20 -20 20 80 1.5 70 150 -55 to +150 1.79 83.3 /W /W Unit V V V A A W W 3.80 www.kexin.com.cn 1 SMD Type 2SJ506S Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Gate to source breakdown voltage Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS VGSS IDSS IGSS Testconditons ID=-10mA,VGS=0 IG= 100 A ,VDS=0 Min -30 20 MOSFET IC Typ Max Unit V V VDS=-30V,VGS=0 VGS= 16V,VDS=0 -1.0 10 16 65 110 660 VDS=-10V,VGS=0,f=1MHZ 440 140 12 VGS(on)=-10V,ID=--5A ,RL=2 65 85 65 -10 10 -2.0 A A V S VGS(off) VDS=-10V,ID=-1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=-10V,ID=-5A VGS=-10V,ID=-5A VGS=-4.0V,ID=-5A 65 180 m m pF pF pF ns ns ns ns 2 www.kexin.com.cn |
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